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HSG1002VE-TL-E Images
- Manufacturer: Renesas Electronics
- Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF Package/Case: 4-SMD, Gull Wing
- Description: RF 0.035A C BAND GERMANIUM NPN
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HSG1002VE-TL-E Specifications:
- MfrPart.: HSG1002VE-TL-E
- Mfr: Renesas Electronics America Inc
- Description: RF 0.035A C BAND GERMANIUM NPN
- Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
- Package: Bulk
- Series: -
- PartStatus: Active
- TransistorType: NPN
- Voltage-CollectorEmitterBreakdown(Max): 3.5V
- Frequency-Transition: 38GHz
- NoiseFigure(dBTyp@f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
- Gain: 8dB ~ 19.5dB
- Power-Max: 200mW
- DCCurrentGain(hFE)(Min)@IcVce: 100 @ 5mA, 2V
- Current-Collector(Ic)(Max): 35mA
- OperatingTemperature: -
- MountingType: Surface Mount
- Package/Case: 4-SMD, Gull Wing
- HSG1002VE-TL-E Renesas, RF 0.035A C BAND GERMANIUM NPN, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
HSG1002VE-TL-E, Renesas authentic parts in stock from Renesas authorized distributors, order today, can ship immediately.
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