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2SC3583-T1B-A Images
- Manufacturer: Renesas Electronics
- Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF Package/Case: TO-236-3, SC-59, SOT-23-3
- Description: 2SC3583 - MD
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2SC3583-T1B-A Specifications:
- MfrPart.: 2SC3583-T1B-A
- Mfr: Renesas Electronics America Inc
- Description: 2SC3583 - MD
- Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
- Package: Bulk
- Series: -
- PartStatus: Obsolete
- TransistorType: NPN
- Voltage-CollectorEmitterBreakdown(Max): 10V
- Frequency-Transition: 9GHz
- NoiseFigure(dBTyp@f): 1.2dB @ 1GHz
- Gain: 13dB
- Power-Max: 200mW
- DCCurrentGain(hFE)(Min)@IcVce: 50 @ 20mA, 8V
- Current-Collector(Ic)(Max): 65mA
- OperatingTemperature: 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: TO-236-3, SC-59, SOT-23-3
- 2SC3583-T1B-A Renesas, 2SC3583 - MD, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
2SC3583-T1B-A, Renesas authentic parts in stock from Renesas authorized distributors, order today, can ship immediately.
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